FJB3307D ? high voltage fast switching npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJB3307D rev. a1 1 march 2012 FJB3307D high voltage fast switch ing npn power transistor features ? built-in diode between collector and emitter ? suitable for electronic ballast and switch mode power supplies absolute maximum ratings t a = 25c unless otherwise noted * pulse test: pw = 300 s, duty cycle = 2% pulsed thermal characteristics symbol parameter value units v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current (dc) 8 a i cp * collector current (pulse) 16 a i b base current (dc) 4 a i bp * base current (pulse) 8 a t j junction temperature 150 c t stg storage temperature -55 to 150 c symbol parameter value units p d total device dissipation t a = 25c t c = 25c 1.72 80 w w r ja thermal resistance, junction to ambient 72.5 c/w r jc thermal resistance, junction to case 1.56 c/w internal schematic diagram b e c 1.base 2.collector 3.emitter 1 d 2 -pak
FJB3307D ? high voltage fast switching npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJB3307D rev. a1 2 electrical characteristics t a = 25c unless otherwise noted * pulse test: pw = 300 s, duty cycle = 2% pulsed h fe classification symbol parameter conditions min. typ. max. units bv cbo collector-base breakdown voltage i c = 500 a, i e = 0 700 v bv ceo collector-emitter breakdown voltage i c = 5ma, i b = 0 400 v bv ebo emitter-base breakdown voltage i e = 500 a, i c = 0 9 v i ebo emitter cut-off current v eb = 9v, i c = 0 1 ma h fe1 h fe2 dc current gain v ce = 5v, i c = 2a v ce = 5v, i c = 5a 8 5 40 30 v ce(sat) collector-emitter saturation voltage i c = 2a, i b = 0.4a i c = 5a, i b = 1a i c = 5a, i b = 1a, t a = 100c i c = 8a, i b = 2a 1 2 3 3 v v v v v be(sat) base-emitter saturation voltage i c = 2a, i b = 0.4a i c = 5a, i b = 1a i c = 5a, i b = 1a, t a = 100c 1.2 1.6 2 v v v v f diode forward voltage i c = 3a 2.5 v c ob output capacitance v cb = 10v, i e = 0, f = 1mhz 60 pf t stg storage time v cc = 125v, i c = 5a i b1 = -i b2 = 1a, r l = 50 3 s t f fall time 0.7 s t stg storage time v cc = 30v, i c = 5a, l=200 h i b1 =1a, r bb = 0 , v be(off) = -5v, v clamp = 250v 2.3 s t f fall time 150 ns classification h1 h2 h fe1 15 ~ 28 26 ~ 39
FJB3307D ? high voltage fast switching npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJB3307D rev. a1 3 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. base-emitter saturation voltage figure 5. collector output capacitance figure 6. storage time (resistive load) 0.0 1.2 2.4 3.6 4.8 6.0 7.2 8.4 9.6 10.8 12.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i b =50ma i b =100ma i b =150ma i b =200ma i b =250ma i b =300ma i c [a], collector current v ce [v], collector-emitter voltage 0.1 1 10 1 10 100 v ce = 5v h fe , dc current gain i c [a], collector current t a = 125 o c t a = 75 o c t a = 25 o c t a = - 25 o c 0.01 0.1 1 10 0.01 0.1 1 10 100 v ce (sat),[v] saturation voltage i c [a], collector current i c = 5 i b t a = 125 o c t a = 75 o c t a = 25 o c t a = - 25 o c 0.01 0.1 1 10 0.1 1 10 i c = 5 i b v be (sat)[v], saturation voltage i c [a], collector current t a = 125 o c t a = 75 o c t a = 25 o c t a = - 25 o c 110100 10 100 1000 c ob [pf], output capacitance v cb [v], collector-base voltage f = 1mhz, i e = 0 12345678 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t stg [ s], storage time i c [a], collector current i c = 5 i b v cc = 125v t a = 25 o c
FJB3307D ? high voltage fast switching npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJB3307D rev. a1 4 typical performance characteristics (continued) figure 7. fall time (resistive load) figure 8. storage time (inductive load) figure 9. fall time (inductive load) figure 10. power derating figure 11. reverse bias safe operating area figure 12. rbsoa saturation 12345678 0 50 100 150 200 250 300 350 400 t f [ns], fall time i c [a], collector current i c = 5 i b v cc = 125v t a = 25 o c 12345678 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 t stg [ s], storage time i c [a], collector current i c = 5 i b1 = 2.5 i b2 , v cc = 30v, l = 200 h, v be(off) = -5v, v clamp = 250v, t a = 25 o c 12345678 0.0 12.5 25.0 37.5 50.0 62.5 75.0 t f [ns], fall time i c [a], collector current i c = 5 i b1 = 2.5 i b2 , v cc = 30v, l = 200 h, v be(off) = -5v, v clamp = 250v, t a = 25 o c 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 p d [w], power dissipation t c [ o c], case temperature 200 300 400 500 600 700 800 0 1 2 3 4 5 6 7 8 9 10 11 12 v cc = 50v, l c = 1mh v be (off) = -5v, i b2 = -1.5v ic = 4 ib i c [a], collector current v ce [v], collector-emitter voltage 024681012141618 0 1 2 3 4 5 6 ic = 3.3 ib ic = 4 ib ic = 2.2 ib ic = 5 ib vcc = 50v v be (off) = -5v l c = 1mh v ce [v], collector-emitter voltage i ce [a], collector current
FJB3307D ? high voltage fast switching npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJB3307D rev. a1 5 typical performance characteristics figure 13. forward biased safe operating area 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s i c (max), pulse i c [a], collector curremt v ce [v], collector-emitter voltage t c = 25 o c single pulse i c (max), dc 1ms (continued)
FJB3307D ? high voltage fast switching npn power transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com FJB3307D rev. a1 6 physical dimensions d 2 -pak dimensions in millimeters
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